NTA UGC NET/JRF Exam, June-2019 (Electronic Science)

Total Questions: 100

1. In an open circuited p-n junction, the contact difference of potential is:

Correct Answer: B.

2. The equation for f(E) is the Fermi-Dirac probability function and is:

Correct Answer: A.

3. If the forward bias is applied to the diode, holes are injected from p side

Correct Answer: C.

4. The Ebers-Moll equation for the emitter current is:

Correct Answer: A.

5. The device which is used for detecting light intensity is:

Correct Answer: C. photodiode

6. The resistivity measurements are made on the flat ends of the crystal by the four point probe technique. The current I is passed through the outer probes and voltage is measured between the inner probes. If S is the probe spacing in centimetre, the measure resistance is converted to resistivity using the formula:

Correct Answer: B.

7. In X-ray lithography if S is the size of the X-ray source, g is the gap between wafer and mask and D is the distance between the source and the mask, then the blur is:

Correct Answer: B.

8. In ion implantation for Gaussian distribution profile, with standard deviation σₚ, if the total dose is ø, then the peak concentration can be expressed as:

Correct Answer: B.

9. Deal and Grove model is applicable in:

Correct Answer: C. oxidation

10. The MOSFET will have higher cut-off frequency, if:

Correct Answer: A.