NTA UGC NET/JRF Exam, December-2019 (Electronic Science)

Total Questions: 100

71. Match the elements of the lists given below:

Choose the correct option:

(a)(b)(c)(d)
A.(iii)(ii)(iv)(i)
B.(i)(ii)(iii)(iv)
C.(ii)(iii)(iv)(i)
D.(iv)(i)(ii)(iii)
Correct Answer: A.

72. Match the elements of the lists given below:

List-I (Colour)List-II (Layer)
(a) Green(i) Contact cut
(b) Red(ii) Metal
(c) Blue(iii) Thinox
(d) Black(iv) Polysilicon

Choose the correct option:

(a)(b)(c)(d)
A.(i)(ii)(iii)(iv)
B.(iii)(iv)(ii)(i)
C.(ii)(iii)(iv)(i)
D.(iv)(i)(ii)(iii)
Correct Answer: B.

73. Match the elements of the lists given below:

Choose the correct option:

(a)(b)(c)(d)
A.(ii)(iv)(i)(iii)
B.(ii)(iv)(iii)(i)
C.(iii)(i)(iv)(ii)
D.(iii)(iv)(i)(ii)
Correct Answer: C.

74. Match the elements of the lists given below:

List-I (Feedback type)List-II (Amplifier type)
(a) Voltage-series(i) Current amplifier
(b) Voltage-shunt(ii) Voltage amplifier
(c) Current-series(iii) Trans resistance amplifier
(d) Current-shunt(iv) Trans conductance amplifier

Choose the correct option:

(a)(b)(c)(d)
A.(ii)(iii)(iv)(i)
B.(ii)(iv)(i)(iii)
C.(ii)(iii)(i)(iv)
D.(ii)(iv)(iii)(i)
Correct Answer: A.

75. Match the elements of the lists given below:

List-I (Type of memory)List-II (Feature)
(a) Field-programmable(i) Referring to a PROM that can be programmed only by manufacturer
(b) Mask-programmable(ii) Referring to the content addressable memory
(c) Associative(iii) Non-volatile memory which can be written and erased electrically
(d) Flash(iv) Referring to a PROM that can be programmed by the user

Choose the correct option:

(a)(b)(c)(d)
A.(iii)(ii)(iv)(i)
B.(iv)(i)(ii)(iii)
C.(ii)(iv)(iii)(i)
D.(i)(iv)(ii)(iii)
Correct Answer: B.

76. Match the elements of the lists given below:

List-I (8051 instructions)List-II (Equivalent instructions for timer controlled register)
(a) SET B TR0(i) SET B TCON.5
(b) CLR TR1(ii) CLR TCON.7
(c) SET B TF0(iii) SET B TCON.4
(d) CLR TF1(iv) CLR TCON.6

Choose the correct option:

(a)(b)(c)(d)
A.(i)(ii)(iv)(iii)
B.(iii)(iv)(i)(ii)
C.(ii)(i)(iii)(iv)
D.(iv)(iii)(ii)(i)
Correct Answer: B.

77. Match the elements of the lists given below:

List-I (Band name)List-II (Frequency range, GHz)
(a) L(i) 3.9 – 8.0
(b) C(ii) 1.0 – 1.5
(c) Ka(iii) 18.0 – 26.5
(d) K(iv) 26.5 – 40

Choose the correct option:

(a)(b)(c)(d)
A.(iv)(iii)(ii)(i)
B.(i)(iii)(iv)(ii)
C.(ii)(i)(iv)(iii)
D.(ii)(i)(iii)(iv)
Correct Answer: C.

78. Match the elements of the lists given below:

Choose the correct option:

(a)(b)(c)(d)
A.(iv)(i)(iii)(ii)
B.(i)(iii)(ii)(iv)
C.(iii)(i)(ii)(iv)
D.(ii)(iii)(iv)(i)
Correct Answer: A.

79. Match the elements of the lists given below:

List-I (Triggering Technique)List-II (Operation)
(a) High voltage(i) A light wave strikes the junction of SCR
(b) $dV/dT$(ii) A positive gate voltage is applied between the gate and cathode terminals
(c) Gate current(iii) Rate of rise of anode-cathode voltage is high
(d) Light(iv) Anode to cathode voltage is greater than forward break down voltage

Choose the correct option:

(a)(b)(c)(d)
A.(iii)(iv)(i)(ii)
B.(i)(ii)(iv)(iii)
C.(iv)(iii)(ii)(i)
D.(ii)(i)(iii)(iv)
Correct Answer: C.

80. Match the elements of the lists given below:

List-I (DVM)List-II (Characteristic)
(a) Ramp-type(i) Automatic zero correction
(b) Dual-slope convertor(ii) Linear ramp voltage rises from 0V to level of input voltage
(c) Stair-case ramp(iii) Binary regression
(d) Successive approximation(iv) Internally generated stair case ramp voltage

Choose the correct option:

(a)(b)(c)(d)
A.(iv)(ii)(iii)(i)
B.(ii)(i)(iv)(iii)
C.(i)(iii)(ii)(iv)
D.(iii)(iv)(i)(ii)
Correct Answer: B.